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TK9A55DA Spec and Replacement


   Type Designator: TK9A55DA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.86 Ohm
   Package: TO220SIS

 TK9A55DA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK9A55DA Specs

 ..1. Size:192K  toshiba
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TK9A55DA

TK9A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK9A55DA Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON resistance RDS (ON) = 0.68 (typ.) High forward transfer admittance Yfs = 4.7 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement-mod... See More ⇒

 ..2. Size:252K  inchange semiconductor
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TK9A55DA

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK9A55DA ITK9A55DA FEATURES Low drain-source on-resistance RDS(ON) = 0.68 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS... See More ⇒

Detailed specifications: TK8A50DA , TK8A50D , TK8A55DA , TK8A60DA , TK8A65D , TK8P25DA , TK8S06K3L , TK9A45D , 12N60 , TK9A60D , TPC6008-H , TPC6009-H , TPC6010-H , TPC6011 , TPC6012 , TPC6103 , TPC6109-H .

History: IXFX80N50Q3 | TPC6010-H | TPC8118 | ME7632S | H5N5016PL | 3N325 | VBB1630

Keywords - TK9A55DA MOSFET specs

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