TK9A55DA PDF and Equivalents Search

 

TK9A55DA Specs and Replacement

Type Designator: TK9A55DA

Marking Code: K9A55DA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 20 nC

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 100 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.86 Ohm

Package: TO220SIS

TK9A55DA substitution

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TK9A55DA datasheet

 ..1. Size:192K  toshiba
tk9a55da.pdf pdf_icon

TK9A55DA

TK9A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK9A55DA Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON resistance RDS (ON) = 0.68 (typ.) High forward transfer admittance Yfs = 4.7 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement-mod... See More ⇒

 ..2. Size:252K  inchange semiconductor
tk9a55da.pdf pdf_icon

TK9A55DA

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK9A55DA ITK9A55DA FEATURES Low drain-source on-resistance RDS(ON) = 0.68 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS... See More ⇒

Detailed specifications: TK8A50DA , TK8A50D , TK8A55DA , TK8A60DA , TK8A65D , TK8P25DA , TK8S06K3L , TK9A45D , 12N60 , TK9A60D , TPC6008-H , TPC6009-H , TPC6010-H , TPC6011 , TPC6012 , TPC6103 , TPC6109-H .

Keywords - TK9A55DA MOSFET specs

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