All MOSFET. TK9A55DA Datasheet

 

TK9A55DA MOSFET. Datasheet pdf. Equivalent

Type Designator: TK9A55DA

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 550 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 8.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 20 nC

Maximum Drain-Source On-State Resistance (Rds): 0.86 Ohm

Package: TO220SIS

TK9A55DA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK9A55DA Datasheet (PDF)

0.1. tk9a55da.pdf Size:192K _toshiba

TK9A55DA
TK9A55DA

TK9A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK9A55DA Switching Regulator Applications Unit: mm 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2 A • Low drain-source ON resistance: RDS (ON) = 0.68 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.7 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) • Enhancement-mod

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