2SJ438 Datasheet. Specs and Replacement

Type Designator: 2SJ438  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO220NIS

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2SJ438 datasheet

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2SJ438

2SJ438 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- -MOSV) 2SJ438 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.16 (typ.) DS (ON) High forward transfer admittance Y = 4.0 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -60 V) DS Enhancement-mode... See More ⇒

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2SJ438

2SJ439 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ( -MOSV) 2SJ439 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications 2.5 V gate drive Low drain-source ON resistance R = 0.18 (typ.) DS (ON) High forward transfer admittance Y = 6.0 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -16 V) DS Enhancement-mode ... See More ⇒

Detailed specifications: 2SJ349, 2SJ377, 2SJ378, 2SJ380, 2SJ401, 2SJ402, 2SJ407, 2SJ412, IRFP260, 2SJ439, 2SJ440, 2SJ464, 2SJ507, 2SJ508, 2SJ509, 2SJ512, 2SJ516

Keywords - 2SJ438 MOSFET specs

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