All MOSFET. 2SK2608 Datasheet

 

2SK2608 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK2608

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Drain Current |Id|: 3 A

Total Gate Charge (Qg): 25 nC

Maximum Drain-Source On-State Resistance (Rds): 4.3 Ohm

Package: TO220AB

2SK2608 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK2608 Datasheet (PDF)

1.1. 2sk2608.pdf Size:413K _toshiba

2SK2608
2SK2608

2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2608 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS = 3.73 ? (typ.) (ON) High forward transfer admittance : |Y | 2.6 S (typ.) fs = Low leakage current : I = 100 µA (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Ma

1.2. 2sk2608.pdf Size:260K _inchange_semiconductor

2SK2608
2SK2608

isc N-Channel MOSFET Transistor 2SK2608 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.78Ω(TYP) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · Efficient and reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃

 4.1. 2sk259h 2sk260h.pdf Size:160K _update

2SK2608
2SK2608



4.2. 2sk260.pdf Size:52K _update

2SK2608
2SK2608

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK260 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Fast Switching Speed APPLICATIONS ·Designed especially for high voltage,high speed applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 400

 4.3. 2sk2604.pdf Size:404K _toshiba

2SK2608
2SK2608

2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2604 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS = 1.9 ? (typ.) (ON) High forward transfer admittance : |Y | = 3.8 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Max

4.4. 2sk2606.pdf Size:147K _toshiba

2SK2608
2SK2608

2SK2606 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2606 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 1.0 ? (typ.) High forward transfer admittance : |Yfs|= 7.0 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 640 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V,

 4.5. 2sk2605.pdf Size:411K _toshiba

2SK2608
2SK2608

2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2605 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS = 1.9 ? (typ.) (ON) High forward transfer admittance : |Y | = 3.8 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Max

4.6. 2sk2603.pdf Size:410K _toshiba

2SK2608
2SK2608

2SK2603 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2603 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 3.0 ? (typ.) (ON) High forward transfer admittance : |Y | = 2.6 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (

4.7. 2sk2607.pdf Size:413K _toshiba

2SK2608
2SK2608

2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2607 Chopper Regulator, DC-DC Converter and Moter Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.0 ? (typ.) (ON) High forward transfer admittance : |Y | 7.0 S (typ.) fs = Low leakage current : I = 100 µA (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (

4.8. 2sk2601.pdf Size:412K _toshiba

2SK2608
2SK2608

2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2601 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 0.75 ? (typ.) (ON) High forward transfer admittance : |Y | = 7.0 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10

4.9. 2sk2602.pdf Size:407K _toshiba

2SK2608
2SK2608

2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2602 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS = 0.9 ? (typ.) (ON) High forward transfer admittance : |Y | = 5.5 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Maxim

4.10. 2sk2601.pdf Size:208K _inchange_semiconductor

2SK2608
2SK2608

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK2601 ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER

Datasheet: 2SK2544 , 2SK2545 , 2SK2549 , 2SK2598 , 2SK2599 , 2SK2603 , 2SK2604 , 2SK2605 , BS170 , 2SK2610 , 2SK2611 , 2SK2614 , 2SK2661 , 2SK2662 , 2SK2679 , 2SK2698 , 2SK2717 .

 

 
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