All MOSFET. TK07H90A Datasheet

 

TK07H90A Datasheet and Replacement


   Type Designator: TK07H90A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO3P
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TK07H90A Datasheet (PDF)

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TK07H90A

TK07H90A TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS IV) TK07H90A Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.6 (typ.) High forward transfer admittance : |Yfs| =5.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 720V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maxi

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: TJ150F04M3L | TF2310

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