All MOSFET. TK07H90A Datasheet

 

TK07H90A Datasheet and Replacement


   Type Designator: TK07H90A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 45 nC
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO3P
 

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TK07H90A Datasheet (PDF)

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TK07H90A

TK07H90A TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS IV) TK07H90A Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.6 (typ.) High forward transfer admittance : |Yfs| =5.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 720V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maxi

Datasheet: 2SK4107 , 2SK4108 , 2SK4110 , 2SK4111 , 2SK4112 , 2SK4113 , 2SK4114 , TJ120F06J3 , AON7506 , TK09H90A , TK100F04K3L , TK12D60U , TK13H90A1 , TK150F04K3L , TK15D60U , TK15H50C , TK15J60T .

History: HYG060P04LQ1V | HIRF730F

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