TK07H90A PDF and Equivalents Search

 

TK07H90A Specs and Replacement

Type Designator: TK07H90A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO3P

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TK07H90A datasheet

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TK07H90A

TK07H90A TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS IV) TK07H90A Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.6 (typ.) High forward transfer admittance Yfs =5.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 720V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maxi... See More ⇒

Detailed specifications: 2SK4107, 2SK4108, 2SK4110, 2SK4111, 2SK4112, 2SK4113, 2SK4114, TJ120F06J3, IRFB3607, TK09H90A, TK100F04K3L, TK12D60U, TK13H90A1, TK150F04K3L, TK15D60U, TK15H50C, TK15J60T

Keywords - TK07H90A MOSFET specs

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