TK09H90A Specs and Replacement
Type Designator: TK09H90A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 190 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO3P
TK09H90A substitution
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TK09H90A datasheet
tk09h90a.pdf
TK09H90A TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type( -MOS IV) TK09H90A Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.0 (typ.) High forward transfer admittance Yfs = 6S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 720V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum... See More ⇒
Detailed specifications: 2SK4108, 2SK4110, 2SK4111, 2SK4112, 2SK4113, 2SK4114, TJ120F06J3, TK07H90A, AON6380, TK100F04K3L, TK12D60U, TK13H90A1, TK150F04K3L, TK15D60U, TK15H50C, TK15J60T, TK16H60C
Keywords - TK09H90A MOSFET specs
TK09H90A cross reference
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