All MOSFET. TK09H90A Datasheet

 

TK09H90A Datasheet and Replacement


   Type Designator: TK09H90A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO3P
 

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TK09H90A Datasheet (PDF)

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TK09H90A

TK09H90A TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type(-MOS IV) TK09H90A Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.0 (typ.) High forward transfer admittance : |Yfs| = 6S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 720V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

Datasheet: 2SK4108 , 2SK4110 , 2SK4111 , 2SK4112 , 2SK4113 , 2SK4114 , TJ120F06J3 , TK07H90A , IRLZ44N , TK100F04K3L , TK12D60U , TK13H90A1 , TK150F04K3L , TK15D60U , TK15H50C , TK15J60T , TK16H60C .

History: 2SK634 | STD10PF06-1 | NCE0157A2 | SVT078R0NT | IPS110N12N3 | IRLML6302PBF-1 | GKI06259

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