All MOSFET. TK12D60U Datasheet

 

TK12D60U Datasheet and Replacement


   Type Designator: TK12D60U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 144 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 1700 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO220
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TK12D60U Datasheet (PDF)

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TK12D60U

TK12D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK12D60U Switching Regulator Applications Unit: mm10.00.3 A 9.50.2 Low drain-source ON-resistance: RDS (ON) = 0.36 (typ.) 0.60.1 3.650.2 High forward transfer admittance: Yfs = 7.0 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement mode: V

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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