TK12D60U Specs and Replacement
Type Designator: TK12D60U
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 144 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 1700 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220
TK12D60U substitution
- MOSFET ⓘ Cross-Reference Search
TK12D60U datasheet
tk12d60u.pdf
TK12D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK12D60U Switching Regulator Applications Unit mm 10.0 0.3 A 9.5 0.2 Low drain-source ON-resistance RDS (ON) = 0.36 (typ.) 0.6 0.1 3.65 0.2 High forward transfer admittance Yfs = 7.0 S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement mode V... See More ⇒
Detailed specifications: 2SK4111, 2SK4112, 2SK4113, 2SK4114, TJ120F06J3, TK07H90A, TK09H90A, TK100F04K3L, CS150N03A8, TK13H90A1, TK150F04K3L, TK15D60U, TK15H50C, TK15J60T, TK16H60C, TK17A25D, TK19H50C
Keywords - TK12D60U MOSFET specs
TK12D60U cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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