TK16H60C Specs and Replacement
Type Designator: TK16H60C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 270 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO3P
TK16H60C substitution
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TK16H60C datasheet
tk16h60c.pdf
TK16H60C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS VI) TK16H60C Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0. 32 (typ.) High forward transfer admittance Yfs = 11S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Ma... See More ⇒
Detailed specifications: TK09H90A, TK100F04K3L, TK12D60U, TK13H90A1, TK150F04K3L, TK15D60U, TK15H50C, TK15J60T, AO4407, TK17A25D, TK19H50C, TK20A20D, TK20A60T, TK20D60T, TK20D60U, TK20H50C, TK20J60T
Keywords - TK16H60C MOSFET specs
TK16H60C cross reference
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