All MOSFET. TK16H60C Datasheet

 

TK16H60C Datasheet and Replacement


   Type Designator: TK16H60C
   Marking Code: TK16H60C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 62 nC
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO3P
 

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TK16H60C Datasheet (PDF)

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TK16H60C

TK16H60C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) TK16H60C Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0. 32 (typ.) High forward transfer admittance : |Yfs| = 11S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 600 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Ma

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFP460 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IXTP220N075T

Keywords - TK16H60C MOSFET datasheet

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