All MOSFET. TK19H50C Datasheet

 

TK19H50C Datasheet and Replacement


   Type Designator: TK19H50C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 62 nC
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO3P
 

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TK19H50C Datasheet (PDF)

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TK19H50C

TK19H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) TK19H50C Switching Regulator Applications Unit: mm Low drain-source ON resistance : R = 0. 25 (typ.) DS (ON) High forward transfer admittance : |Y | = 14 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancement mode : V = 2.0~4.0 V (V = 10 V, I = 1 mA) th DS DM

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IXTH20M60MB | IPP041N12N3G

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