TK19H50C PDF and Equivalents Search

 

TK19H50C Specs and Replacement

Type Designator: TK19H50C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO3P

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TK19H50C datasheet

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TK19H50C

TK19H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS VI) TK19H50C Switching Regulator Applications Unit mm Low drain-source ON resistance R = 0. 25 (typ.) DS (ON) High forward transfer admittance Y = 14 S (typ.) fs Low leakage current I = 100 A (max) (V = 500 V) DSS DS Enhancement mode V = 2.0 4.0 V (V = 10 V, I = 1 mA) th DS D M... See More ⇒

Detailed specifications: TK12D60U, TK13H90A1, TK150F04K3L, TK15D60U, TK15H50C, TK15J60T, TK16H60C, TK17A25D, 4N60, TK20A20D, TK20A60T, TK20D60T, TK20D60U, TK20H50C, TK20J60T, TK40A10N1, TK40D10J1

Keywords - TK19H50C MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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