TK20D60T MOSFET. Datasheet pdf. Equivalent
Type Designator: TK20D60T
Marking Code: K20D60T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 3800 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO220
TK20D60T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK20D60T Datasheet (PDF)
tk20d60t.pdf
TK20D60T NMOS (DTMOS) TK20D60T : mm10.00.3 A 9.50.2 0.60.1 : RDS (ON) = 0.165 () 3.650.2 : Yfs = 12 S () : IDSS = 100A (
tk20d60u.pdf
TK20D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK20D60U Switching Regulator Applications Unit: mm10.0 0.3 A 9.5 0.2 0.60.1 Low drain-source ON-resistance: RDS (ON) = 0.165 (typ.) 3.65 0.2 High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SUD25N15-52-E3 | SIHLD014 | 2SK1282
History: SUD25N15-52-E3 | SIHLD014 | 2SK1282
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