All MOSFET. TK20D60T Datasheet

 

TK20D60T Datasheet and Replacement


   Type Designator: TK20D60T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 3800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO220
 

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TK20D60T Datasheet (PDF)

 ..1. Size:254K  toshiba
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TK20D60T

TK20D60T NMOS (DTMOS) TK20D60T : mm10.00.3 A 9.50.2 0.60.1 : RDS (ON) = 0.165 () 3.650.2 : Yfs = 12 S () : IDSS = 100A (

 7.1. Size:196K  toshiba
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TK20D60T

TK20D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK20D60U Switching Regulator Applications Unit: mm10.0 0.3 A 9.5 0.2 0.60.1 Low drain-source ON-resistance: RDS (ON) = 0.165 (typ.) 3.65 0.2 High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement

Datasheet: TK15D60U , TK15H50C , TK15J60T , TK16H60C , TK17A25D , TK19H50C , TK20A20D , TK20A60T , 5N65 , TK20D60U , TK20H50C , TK20J60T , TK40A10N1 , TK40D10J1 , TK40E10N1 , TK50F15J1 , TK55D10J1 .

History: CRTE120N06L | SI6443DQ | FQA46N15F109 | HY3410PM | STP310N10F7 | IRFS3207ZPBF | SIF12N65C

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