TK20D60T PDF and Equivalents Search

 

TK20D60T Specs and Replacement

Type Designator: TK20D60T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 3800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO220

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TK20D60T datasheet

 ..1. Size:254K  toshiba
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TK20D60T

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 7.1. Size:196K  toshiba
 tk20d60u.pdf pdf_icon

TK20D60T

TK20D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK20D60U Switching Regulator Applications Unit mm 10.0 0.3 A 9.5 0.2 0.6 0.1 Low drain-source ON-resistance RDS (ON) = 0.165 (typ.) 3.65 0.2 High forward transfer admittance Yfs = 12 S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement ... See More ⇒

Detailed specifications: TK15D60U, TK15H50C, TK15J60T, TK16H60C, TK17A25D, TK19H50C, TK20A20D, TK20A60T, 2SK3568, TK20D60U, TK20H50C, TK20J60T, TK40A10N1, TK40D10J1, TK40E10N1, TK50F15J1, TK55D10J1

Keywords - TK20D60T MOSFET specs

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