TK20D60U Datasheet and Replacement
Type Designator: TK20D60U
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 3500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO220
TK20D60U substitution
TK20D60U Datasheet (PDF)
tk20d60u.pdf
TK20D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK20D60U Switching Regulator Applications Unit: mm10.0 0.3 A 9.5 0.2 0.60.1 Low drain-source ON-resistance: RDS (ON) = 0.165 (typ.) 3.65 0.2 High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement
tk20d60t.pdf
TK20D60T NMOS (DTMOS) TK20D60T : mm10.00.3 A 9.50.2 0.60.1 : RDS (ON) = 0.165 () 3.650.2 : Yfs = 12 S () : IDSS = 100A (
Datasheet: TK15H50C , TK15J60T , TK16H60C , TK17A25D , TK19H50C , TK20A20D , TK20A60T , TK20D60T , STP80NF70 , TK20H50C , TK20J60T , TK40A10N1 , TK40D10J1 , TK40E10N1 , TK50F15J1 , TK55D10J1 , TK60D08J1 .
History: AP65SL190DP | TK22A65X5 | FK30SM-6 | 2SK1573 | IPD80R2K8CE | CDM22010-650 | SFG280N08KF
Keywords - TK20D60U MOSFET datasheet
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History: AP65SL190DP | TK22A65X5 | FK30SM-6 | 2SK1573 | IPD80R2K8CE | CDM22010-650 | SFG280N08KF
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