All MOSFET. TK40D10J1 Datasheet

 

TK40D10J1 Datasheet and Replacement


   Type Designator: TK40D10J1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO220
 

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TK40D10J1 Datasheet (PDF)

 ..1. Size:197K  toshiba
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TK40D10J1

TK40D10J1 www.DataSheet4U.comTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS) TK40D10J1 Switching Regulator Applications Unit: mm 10.00.3 A 9.50.2 0.60.1 Small gate charge: Qg = 76nC (typ.) 3.650.2 Low drain-source ON-resistance: RDS (ON) = 11.5 m (typ.) High forward transfer admittance: |Yfs| = 90 S

Datasheet: TK19H50C , TK20A20D , TK20A60T , TK20D60T , TK20D60U , TK20H50C , TK20J60T , TK40A10N1 , 7N60 , TK40E10N1 , TK50F15J1 , TK55D10J1 , TK60D08J1 , TK65A10N1 , TK65E10N1 , TK6B60D , TK70D06J1 .

History: TPA60R330M | NTGS3441BT1G

Keywords - TK40D10J1 MOSFET datasheet

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