All MOSFET. TK40D10J1 Datasheet

 

TK40D10J1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK40D10J1
   Marking Code: K40D10J
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 76 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO220

 TK40D10J1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK40D10J1 Datasheet (PDF)

 ..1. Size:197K  toshiba
 tk40d10j1.pdf

TK40D10J1 TK40D10J1

TK40D10J1 www.DataSheet4U.comTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS) TK40D10J1 Switching Regulator Applications Unit: mm 10.00.3 A 9.50.2 0.60.1 Small gate charge: Qg = 76nC (typ.) 3.650.2 Low drain-source ON-resistance: RDS (ON) = 11.5 m (typ.) High forward transfer admittance: |Yfs| = 90 S

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK2133 | BLF6G10-45

 

 
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