All MOSFET. TK50F15J1 Datasheet

 

TK50F15J1 Datasheet and Replacement


   Type Designator: TK50F15J1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO220SM
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TK50F15J1 Datasheet (PDF)

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TK50F15J1

TK50F15J1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK50F15J1TK50F15J1TK50F15J1TK50F15J11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators DC-DC Converters2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 22 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (V

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History: SMS4003K | NCE30P12BS | NP180N04TUJ | SSW65R190S2 | SRT10N160LD | SM4186T9RL | APT10021JFLL

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