TK55D10J1 PDF and Equivalents Search

 

TK55D10J1 Specs and Replacement

Type Designator: TK55D10J1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 1000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: TO220

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TK55D10J1 datasheet

 ..1. Size:171K  toshiba
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TK55D10J1

TK55D10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS ) TK55D10J1 Switching Regulator Applications Unit mm 10.0 0.3 High-Speed switching A 9.5 0.2 0.6 0.1 Low gate charge Qg = 110 nC (typ.) 3.65 0.2 Low drain-source ON resistance RDS (ON) = 8.4 m (typ.) High forward transfer admittance Yfs = 110 S (t... See More ⇒

Detailed specifications: TK20D60T, TK20D60U, TK20H50C, TK20J60T, TK40A10N1, TK40D10J1, TK40E10N1, TK50F15J1, IRF520, TK60D08J1, TK65A10N1, TK65E10N1, TK6B60D, TK70D06J1, TK70J06K3, TK75J04K3Z, TK80D08K3

Keywords - TK55D10J1 MOSFET specs

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