All MOSFET. TK55D10J1 Datasheet

 

TK55D10J1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK55D10J1
   Marking Code: K55D10J
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 110 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 1000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TO220

 TK55D10J1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK55D10J1 Datasheet (PDF)

 ..1. Size:171K  toshiba
 tk55d10j1.pdf

TK55D10J1 TK55D10J1

TK55D10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS) TK55D10J1 Switching Regulator Applications Unit: mm10.00.3 High-Speed switchingA 9.50.2 0.60.1 Low gate charge: Qg = 110 nC (typ.) 3.650.2 Low drain-source ON resistance: RDS (ON) = 8.4 m (typ.) High forward transfer admittance: |Yfs| = 110 S (t

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
Back to Top