TK65E10N1 MOSFET Datasheet: N-Ch, 100V, 65A. Full specification with pinout and replacement list

TK65E10N1 Specs and Replacement

Type Designator: TK65E10N1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 950 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm

Package: TO220

TK65E10N1 substitution

- MOSFET ⓘ Cross-Reference Search

TK65E10N1 datasheet

..1. Size:245K toshiba
tk65e10n1.pdf pdf_icon

TK65E10N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK65E10N1 TK65E10N1 TK65E10N1 TK65E10N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 4.0 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 100 V) (3) Enha... See More ⇒

..2. Size:246K inchange semiconductor
tk65e10n1.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK65E10N1 ITK65E10N1 FEATURES Low drain-source on-resistance RDS(on) 4.8m . (VGS = 10 V) Enhancement mode Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIM... See More ⇒

Detailed specifications: TK20J60T, TK40A10N1, TK40D10J1, TK40E10N1, TK50F15J1, TK55D10J1, TK60D08J1, TK65A10N1, IRFZ24N, TK6B60D, TK70D06J1, TK70J06K3, TK75J04K3Z, TK80D08K3, TK8B50D, TK9A20DA, TPC6001