All MOSFET. TK65E10N1 Datasheet

 

TK65E10N1 Datasheet and Replacement


   Type Designator: TK65E10N1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 950 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: TO220
 

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TK65E10N1 Datasheet (PDF)

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TK65E10N1

TK65E10N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK65E10N1TK65E10N1TK65E10N1TK65E10N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 4.0 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 100 V)(3) Enha

 ..2. Size:246K  inchange semiconductor
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TK65E10N1

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK65E10N1ITK65E10N1FEATURESLow drain-source on-resistance:RDS(on) 4.8m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIM

Datasheet: TK20J60T , TK40A10N1 , TK40D10J1 , TK40E10N1 , TK50F15J1 , TK55D10J1 , TK60D08J1 , TK65A10N1 , IRFZ24N , TK6B60D , TK70D06J1 , TK70J06K3 , TK75J04K3Z , TK80D08K3 , TK8B50D , TK9A20DA , TPC6001 .

History: BRCS20P06IP | NTLJS3A18PZ

Keywords - TK65E10N1 MOSFET datasheet

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