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TK75J04K3Z Specs and Replacement

Type Designator: TK75J04K3Z

Marking Code: K75J04K3Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 190 nC

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 2060 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TO3P

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TK75J04K3Z datasheet

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TK75J04K3Z

TK75J04K3Z MOSFETs Silicon N-channel MOS (U-MOS ) TK75J04K3Z TK75J04K3Z TK75J04K3Z TK75J04K3Z 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 2.2 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) ... See More ⇒

Detailed specifications: TK50F15J1, TK55D10J1, TK60D08J1, TK65A10N1, TK65E10N1, TK6B60D, TK70D06J1, TK70J06K3, 75N75, TK80D08K3, TK8B50D, TK9A20DA, TPC6001, TPC6003, TPC6004, TPC6005, TPC6006-H

Keywords - TK75J04K3Z MOSFET specs

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