All MOSFET. TK80D08K3 Datasheet

 

TK80D08K3 Datasheet and Replacement


   Type Designator: TK80D08K3
   Marking Code: K80D08K3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 175 nC
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 1140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO220
 

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TK80D08K3 Datasheet (PDF)

 ..1. Size:199K  toshiba
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TK80D08K3

TK80D08K3 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TK80D08K3 Switching Regulator Applications Unit: mm10.00.3 Low drain-source ON-resistance: RDS (ON) = 3.6 m (typ.) A 9.50.2 0.60.1 High forward transfer admittance: |Yfs| = 200 S 3.650.2 Low leakage current: IDSS = 10 A (max) (VDS = 75 V) E

Datasheet: TK55D10J1 , TK60D08J1 , TK65A10N1 , TK65E10N1 , TK6B60D , TK70D06J1 , TK70J06K3 , TK75J04K3Z , RU6888R , TK8B50D , TK9A20DA , TPC6001 , TPC6003 , TPC6004 , TPC6005 , TPC6006-H , TPC6007-H .

History: SSQ6N60

Keywords - TK80D08K3 MOSFET datasheet

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