TK80D08K3 PDF and Equivalents Search

 

TK80D08K3 Specs and Replacement

Type Designator: TK80D08K3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 1140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO220

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TK80D08K3 datasheet

 ..1. Size:199K  toshiba
 tk80d08k3.pdf pdf_icon

TK80D08K3

TK80D08K3 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TK80D08K3 Switching Regulator Applications Unit mm 10.0 0.3 Low drain-source ON-resistance RDS (ON) = 3.6 m (typ.) A 9.5 0.2 0.6 0.1 High forward transfer admittance Yfs = 200 S 3.65 0.2 Low leakage current IDSS = 10 A (max) (VDS = 75 V) E... See More ⇒

Detailed specifications: TK55D10J1, TK60D08J1, TK65A10N1, TK65E10N1, TK6B60D, TK70D06J1, TK70J06K3, TK75J04K3Z, AO3400A, TK8B50D, TK9A20DA, TPC6001, TPC6003, TPC6004, TPC6005, TPC6006-H, TPC6007-H

Keywords - TK80D08K3 MOSFET specs

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