All MOSFET. TK8B50D Datasheet

 

TK8B50D Datasheet and Replacement


   Type Designator: TK8B50D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO220NIS
 

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TK8B50D Datasheet (PDF)

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TK8B50D

TK8B50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK8B50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 (typ.) High forward transfer admittance: |Yfs| = 4.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu

Datasheet: TK60D08J1 , TK65A10N1 , TK65E10N1 , TK6B60D , TK70D06J1 , TK70J06K3 , TK75J04K3Z , TK80D08K3 , IRF730 , TK9A20DA , TPC6001 , TPC6003 , TPC6004 , TPC6005 , TPC6006-H , TPC6007-H , TPC6101 .

History: SFB120N80A | HYG050N08NS1P | NCE3080I | GSM4850WS | STB10LN80K5 | SSF4703 | ASDM3010

Keywords - TK8B50D MOSFET datasheet

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