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TK8B50D Specs and Replacement

Type Designator: TK8B50D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO220NIS

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TK8B50D datasheet

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TK8B50D

TK8B50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK8B50D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.7 (typ.) High forward transfer admittance Yfs = 4.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu... See More ⇒

Detailed specifications: TK60D08J1, TK65A10N1, TK65E10N1, TK6B60D, TK70D06J1, TK70J06K3, TK75J04K3Z, TK80D08K3, IRFB31N20D, TK9A20DA, TPC6001, TPC6003, TPC6004, TPC6005, TPC6006-H, TPC6007-H, TPC6101

Keywords - TK8B50D MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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