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TK9A20DA Specs and Replacement

Type Designator: TK9A20DA

Marking Code: K9A20DA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V

Qg ⓘ - Total Gate Charge: 14 nC

tr ⓘ - Rise Time: 37 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO220SIS

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TK9A20DA datasheet

 ..1. Size:262K  toshiba
 tk9a20da.pdf pdf_icon

TK9A20DA

TK9A20DA MOSFETs Silicon N-Channel MOS ( -MOS ) TK9A20DA TK9A20DA TK9A20DA TK9A20DA 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.26 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 200 V) (3) Enhancement mode Vth =... See More ⇒

 ..2. Size:253K  inchange semiconductor
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TK9A20DA

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK9A20DA ITK9A20DA FEATURES Low drain-source on-resistance RDS(ON) = 0.26 (typ.) Enhancement mode Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS... See More ⇒

Detailed specifications: TK65A10N1, TK65E10N1, TK6B60D, TK70D06J1, TK70J06K3, TK75J04K3Z, TK80D08K3, TK8B50D, STP65NF06, TPC6001, TPC6003, TPC6004, TPC6005, TPC6006-H, TPC6007-H, TPC6101, TPC6102

Keywords - TK9A20DA MOSFET specs

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