All MOSFET. TK9A20DA Datasheet

 

TK9A20DA Datasheet and Replacement


   Type Designator: TK9A20DA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO220SIS
 

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TK9A20DA Datasheet (PDF)

 ..1. Size:262K  toshiba
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TK9A20DA

TK9A20DAMOSFETs Silicon N-Channel MOS (-MOS)TK9A20DATK9A20DATK9A20DATK9A20DA1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.26 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 200 V)(3) Enhancement mode: Vth =

 ..2. Size:253K  inchange semiconductor
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TK9A20DA

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK9A20DAITK9A20DAFEATURESLow drain-source on-resistance:RDS(ON) = 0.26 (typ.)Enhancement mode:Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

Datasheet: TK65A10N1 , TK65E10N1 , TK6B60D , TK70D06J1 , TK70J06K3 , TK75J04K3Z , TK80D08K3 , TK8B50D , IRFZ48N , TPC6001 , TPC6003 , TPC6004 , TPC6005 , TPC6006-H , TPC6007-H , TPC6101 , TPC6102 .

History: IRFIBC30G | STU30L01A

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