TPC8003 Datasheet and Replacement
Type Designator: TPC8003
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 890 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: SOP8
TPC8003 substitution
TPC8003 Datasheet (PDF)
tpc8003.pdf

TPC8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8003 Lithium Ion Battery Applications Portable Equipment Applications Unit: mmNotebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 5.4 m (typ.) DS (ON) High forward transfer admittance : |Y | = 21 S (typ.) fs Low leakage current
tpc8004.pdf

TPC8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) TPC8004 Lithium Ion Battery Applications Unit: mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 37 m (typ.) DS (ON) High forward transfer admittance : |Y | = 6 S (typ.) fs Low leakage current
tpc8001.pdf

TPC8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) TPC8001 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 15 m (typ.) DS (ON) High forward transfer admittance : |Y | = 11 S (typ.) fs Low leakage current
Datasheet: TPC6102 , TPC6104 , TPC6105 , TPC6106 , TPC6107 , TPC6108 , TPC6201 , TPC8001 , AO4468 , TPC8004 , TPC8006-H , TPC8009-H , TPC8010-H , TPC8012-H , TPC8013-H , TPC8014 , TPC8016-H .
Keywords - TPC8003 MOSFET datasheet
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