Справочник MOSFET. TPC8003

 

TPC8003 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TPC8003
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 2.4 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.5 V
   Максимально допустимый постоянный ток стока |Id|: 13 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 90 nC
   Время нарастания (tr): 14 ns
   Выходная емкость (Cd): 890 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.007 Ohm
   Тип корпуса: SOP8

 Аналог (замена) для TPC8003

 

 

TPC8003 Datasheet (PDF)

 ..1. Size:330K  toshiba
 tpc8003.pdf

TPC8003 TPC8003

TPC8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8003 Lithium Ion Battery Applications Portable Equipment Applications Unit: mmNotebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 5.4 m (typ.) DS (ON) High forward transfer admittance : |Y | = 21 S (typ.) fs Low leakage current

 8.1. Size:509K  toshiba
 tpc8004.pdf

TPC8003 TPC8003

TPC8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) TPC8004 Lithium Ion Battery Applications Unit: mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 37 m (typ.) DS (ON) High forward transfer admittance : |Y | = 6 S (typ.) fs Low leakage current

 8.2. Size:336K  toshiba
 tpc8001.pdf

TPC8003 TPC8003

TPC8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) TPC8001 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 15 m (typ.) DS (ON) High forward transfer admittance : |Y | = 11 S (typ.) fs Low leakage current

 8.3. Size:295K  toshiba
 tpc8006-h.pdf

TPC8003 TPC8003

 8.4. Size:182K  toshiba
 tpc8009-h.pdf

TPC8003 TPC8003

TPC8009-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8009-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Q = 29 nC (typ.) g Low drain-source ON resistance: R = 8 m

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