TPC8009-H
MOSFET. Datasheet pdf. Equivalent
Type Designator: TPC8009-H
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.9
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 13
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 16
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 600
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01
Ohm
Package:
SOP8
TPC8009-H
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPC8009-H
Datasheet (PDF)
..1. Size:182K toshiba
tpc8009-h.pdf 
TPC8009-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8009-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Q = 29 nC (typ.) g Low drain-source ON resistance: R = 8 m
8.1. Size:509K toshiba
tpc8004.pdf
TPC8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) TPC8004 Lithium Ion Battery Applications Unit: mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 37 m (typ.) DS (ON) High forward transfer admittance : |Y | = 6 S (typ.) fs Low leakage current
8.2. Size:336K toshiba
tpc8001.pdf
TPC8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) TPC8001 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 15 m (typ.) DS (ON) High forward transfer admittance : |Y | = 11 S (typ.) fs Low leakage current
8.4. Size:330K toshiba
tpc8003.pdf
TPC8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8003 Lithium Ion Battery Applications Portable Equipment Applications Unit: mmNotebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 5.4 m (typ.) DS (ON) High forward transfer admittance : |Y | = 21 S (typ.) fs Low leakage current
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