All MOSFET. TTK101MFV Datasheet

 

TTK101MFV Datasheet and Replacement


   Type Designator: TTK101MFV
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.00035 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1500 Ohm
   Package: VESM
 

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TTK101MFV Datasheet (PDF)

 ..1. Size:150K  toshiba
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TTK101MFV

TTK101MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101MFV For ECM Unit: mm Application for compact ECM 1.20.05Absolute Maximum Ratings (Ta=25C) 0.80.05Characteristic Symbol Rating UnitGate-drain voltage VGDO -20 V 1Gate current IG 10 mA3Drain power dissipation PD (Note 1) 150 mW Junction temperature Tj 125 C 2Storage temperatur

 8.1. Size:149K  1
 ttk101tk.pdf pdf_icon

TTK101MFV

TTK101TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101TK For ECM Unit: mm Application for compact ECM 1.20.05Absolute Maximum Ratings (Ta=25C) 0.80.05Characteristic Symbol Rating Unit1Gate-Drain voltage VGDO -20 VGate Current IG 10 mA3Drain power dissipation PD 100 mW 2Junction Temperature Tj 125 C Storage temperature range

Datasheet: 2SK3857TV , 2SK4059CT , 2SK4059MFV , 2SK4059TK , 2SK4059TV , 2SK711 , 2SK879 , 2SK880Y , IRFP260N , TTK101TK , 2SJ181L , 2SJ181S , 2SJ186 , 2SJ216 , 2SJ217 , 2SJ221 , 2SJ222 .

History: PSMN006-20K | SMIRF12N65T1TL | UT2304

Keywords - TTK101MFV MOSFET datasheet

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