TTK101MFV - описание и поиск аналогов

TTK101MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101MFV For ECM Unit mm Application for compact ECM 1.2 0.05 Absolute Maximum Ratings (Ta=25 C) 0.8 0.05 Characteristic Symbol Rating Unit Gate-drain voltage VGDO -20 V 1 Gate current IG 10 mA 3 Drain power dissipation PD (Note 1) 150 mW Junction temperature Tj 125 C 2 Storage temperatur

TTK101TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101TK For ECM Unit mm Application for compact ECM 1.2 0.05 Absolute Maximum Ratings (Ta=25 C) 0.8 0.05 Characteristic Symbol Rating Unit 1 Gate-Drain voltage VGDO -20 V Gate Current IG 10 mA 3 Drain power dissipation PD 100 mW 2 Junction Temperature Tj 125 C Storage temperature range