TTK101TK PDF and Equivalents Search

 

TTK101TK Specs and Replacement

Type Designator: TTK101TK

Type of Transistor: JFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.00035 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1500 Ohm

Package: TESM3

TTK101TK substitution

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TTK101TK datasheet

 ..1. Size:149K  1
ttk101tk.pdf pdf_icon

TTK101TK

TTK101TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101TK For ECM Unit mm Application for compact ECM 1.2 0.05 Absolute Maximum Ratings (Ta=25 C) 0.8 0.05 Characteristic Symbol Rating Unit 1 Gate-Drain voltage VGDO -20 V Gate Current IG 10 mA 3 Drain power dissipation PD 100 mW 2 Junction Temperature Tj 125 C Storage temperature range ... See More ⇒

 8.1. Size:150K  toshiba
ttk101mfv.pdf pdf_icon

TTK101TK

TTK101MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101MFV For ECM Unit mm Application for compact ECM 1.2 0.05 Absolute Maximum Ratings (Ta=25 C) 0.8 0.05 Characteristic Symbol Rating Unit Gate-drain voltage VGDO -20 V 1 Gate current IG 10 mA 3 Drain power dissipation PD (Note 1) 150 mW Junction temperature Tj 125 C 2 Storage temperatur... See More ⇒

Detailed specifications: 2SK4059CT, 2SK4059MFV, 2SK4059TK, 2SK4059TV, 2SK711, 2SK879, 2SK880Y, TTK101MFV, IRFB4110, 2SJ181L, 2SJ181S, 2SJ186, 2SJ216, 2SJ217, 2SJ221, 2SJ222, 2SJ247

Keywords - TTK101TK MOSFET specs

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