TTK101TK Datasheet and Replacement
Type Designator: TTK101TK
Marking Code: IA_IB
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.1 V
|Id| ⓘ - Maximum Drain Current: 0.00035 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1500 Ohm
Package: TESM3
TTK101TK substitution
TTK101TK Datasheet (PDF)
ttk101tk.pdf
TTK101TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101TK For ECM Unit: mm Application for compact ECM 1.20.05Absolute Maximum Ratings (Ta=25C) 0.80.05Characteristic Symbol Rating Unit1Gate-Drain voltage VGDO -20 VGate Current IG 10 mA3Drain power dissipation PD 100 mW 2Junction Temperature Tj 125 C Storage temperature range
ttk101mfv.pdf
TTK101MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101MFV For ECM Unit: mm Application for compact ECM 1.20.05Absolute Maximum Ratings (Ta=25C) 0.80.05Characteristic Symbol Rating UnitGate-drain voltage VGDO -20 V 1Gate current IG 10 mA3Drain power dissipation PD (Note 1) 150 mW Junction temperature Tj 125 C 2Storage temperatur
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