2SJ506L Specs and Replacement
Type Designator: 2SJ506L
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 440 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: DPAK
2SJ506L substitution
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2SJ506L datasheet
rej03g0873 2sj506lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
2sj506.pdf
2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET REJ03G0873-0500 (Previous ADE-208-548C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.065 typ. (at VGS = 10 V, ID = 5 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code PRSS0004ZD-B RENESAS Pac... See More ⇒
2sj506s.pdf
SMD Type MOSFET P-Channel MOSFET 2SJ506S TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features 4 VDS (V) =-30V D ID =-10 A 0.127 +0.1 0.80-0.1 max RDS(ON) 85m (VGS =-10V) G RDS(ON) 180 (VGS =-4V) + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4 .60 -0.15 2 Drain 3 Source S 4 Drain Absolute Maximum Ratings Ta... See More ⇒
Detailed specifications: 2SJ319S, 2SJ350, 2SJ387L, 2SJ387S, 2SJ479L, 2SJ479S, 2SJ505L, 2SJ505S, IRF9540N, 2SJ506S, 2SJ527L, 2SJ527S, 2SJ528L, 2SJ528S, 2SJ529L, 2SJ529S, 2SJ530L
Keywords - 2SJ506L MOSFET specs
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History: 4N60KL-TMS4-T
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