2SJ506L Datasheet and Replacement

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET REJ03G0873-0500 (Previous: ADE-208-548C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.065 typ. (at VGS = 10 V, ID = 5 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code: PRSS0004ZD-B RENESAS Pac

SMD Type MOSFETP-Channel MOSFET2SJ506STO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features4 VDS (V) =-30VD ID =-10 A0.127+0.10.80-0.1max RDS(ON) 85m (VGS =-10V)G RDS(ON) 180 (VGS =-4V)+ 0.12.3 0.60- 0.1 1 Gate+0.154 .60 -0.15 2 Drain3 SourceS4 Drain Absolute Maximum Ratings Ta