2SJ506L - Даташиты. Аналоги. Основные параметры

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET REJ03G0873-0500 (Previous ADE-208-548C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.065 typ. (at VGS = 10 V, ID = 5 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code PRSS0004ZD-B RENESAS Pac

SMD Type MOSFET P-Channel MOSFET 2SJ506S TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features 4 VDS (V) =-30V D ID =-10 A 0.127 +0.1 0.80-0.1 max RDS(ON) 85m (VGS =-10V) G RDS(ON) 180 (VGS =-4V) + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4 .60 -0.15 2 Drain 3 Source S 4 Drain Absolute Maximum Ratings Ta