BUK9775-55 Datasheet and Replacement
Type Designator: BUK9775-55
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 19 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: SOT186A
BUK9775-55 Datasheet (PDF)
buk9775-55 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9775-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic full-pack envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 11.7 Afeatures very low on-
buk9775-55a.pdf

BUK9775-55AN-channel TrenchMOS logic level FETRev. 02 10 June 2004 Product dataM3D3081. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9775-55A in SOT186A (TO-220F).2. Features TrenchMOS technology Q101 compliant 150 C rated
Datasheet: BUK9614-55 , BUK9618-30 , BUK9618-55 , BUK9620-55 , BUK9624-55 , BUK9628-55 , BUK9635-55 , BUK9675-55 , IRFP064N , BUK98150-55 , BUK9830-30 , BUK9840-55 , BUK9880-55 , BUP60 , BUP61 , BUP62 , BUP63 .
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