BUK9775-55 PDF and Equivalents Search

 

BUK9775-55 Specs and Replacement

Type Designator: BUK9775-55

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 19 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: SOT186A

BUK9775-55 substitution

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BUK9775-55 datasheet

 ..1. Size:55K  philips
 buk9775-55 2.pdf pdf_icon

BUK9775-55

Philips Semiconductors Product specification TrenchMOS transistor BUK9775-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic full-pack envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 11.7 A features very low on-... See More ⇒

 0.1. Size:135K  philips
 buk9775-55a.pdf pdf_icon

BUK9775-55

BUK9775-55A N-channel TrenchMOS logic level FET Rev. 02 10 June 2004 Product data M3D308 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9775-55A in SOT186A (TO-220F). 2. Features TrenchMOS technology Q101 compliant 150 C rated ... See More ⇒

Detailed specifications: BUK9614-55 , BUK9618-30 , BUK9618-55 , BUK9620-55 , BUK9624-55 , BUK9628-55 , BUK9635-55 , BUK9675-55 , EMB04N03H , BUK98150-55 , BUK9830-30 , BUK9840-55 , BUK9880-55 , BUP60 , BUP61 , BUP62 , BUP63 .

Keywords - BUK9775-55 MOSFET specs

 BUK9775-55 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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