BUK9775-55 Datasheet and Replacement
Type Designator: BUK9775-55
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 19 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: SOT186A
BUK9775-55 substitution
BUK9775-55 Datasheet (PDF)
buk9775-55 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9775-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic full-pack envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 11.7 Afeatures very low on-
buk9775-55a.pdf

BUK9775-55AN-channel TrenchMOS logic level FETRev. 02 10 June 2004 Product dataM3D3081. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9775-55A in SOT186A (TO-220F).2. Features TrenchMOS technology Q101 compliant 150 C rated
Datasheet: BUK9614-55 , BUK9618-30 , BUK9618-55 , BUK9620-55 , BUK9624-55 , BUK9628-55 , BUK9635-55 , BUK9675-55 , 2SK3918 , BUK98150-55 , BUK9830-30 , BUK9840-55 , BUK9880-55 , BUP60 , BUP61 , BUP62 , BUP63 .
History: FDB12N50U | SDD06N70 | AF10N60S | FQAF13N80 | RFG70N06
Keywords - BUK9775-55 MOSFET datasheet
BUK9775-55 cross reference
BUK9775-55 equivalent finder
BUK9775-55 lookup
BUK9775-55 substitution
BUK9775-55 replacement
History: FDB12N50U | SDD06N70 | AF10N60S | FQAF13N80 | RFG70N06



LIST
Last Update
MOSFET: SLI13N50C | SLH95R130GTZ | SLH65R180E7C | SLH60R075GTDI | SLH60R043E7D | SLH10RN20T | SLF95R760GTZ | SLF16N65S | SLF12N65SV | SLF10N65SV | SLE65R1K2E7 | SLD95R3K2GTZ | SLD90N03TB | SLD90N02TB | SLD8N65SV | SLD8N50UD
Popular searches
2sb324 | 2sc1904 | 2sc281 | m28s transistor | 2n3640 | tta1943 transistor | fb4410z | 2sa899