H8N0801AB Specs and Replacement
Type Designator: H8N0801AB
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Id| ⓘ - Maximum Drain Current: 60 A
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm
Package: TO220AB
H8N0801AB substitution
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H8N0801AB datasheet
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Detailed specifications: H7N1005LM, H7N1005LS, H7N1009MD90TZ, H7P0601DL, H7P0601DS, H7P1002DL, H7P1002DS, H7P1006MD90TZ, AON7403, HAT1016R, HAT1020R, HAT1021R, HAT1023R, HAT1024R, HAT1025R, HAT1026R, HAT1038R
Keywords - H8N0801AB MOSFET specs
H8N0801AB cross reference
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