All MOSFET. RJJ0101DPD Datasheet

 

RJJ0101DPD Datasheet and Replacement


   Type Designator: RJJ0101DPD
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 235 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: MP3A
 

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RJJ0101DPD Datasheet (PDF)

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RJJ0101DPD

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: HITK0202MP , HITK0203MP , HITK0204MP , HITK0302MP , HITK0303MP , HS54095 , HS54095TZ-E , HS56021 , 8N60 , RJJ0315DPA , RJJ0621DPP , RJJ1011DPD , RJK0202DSP , RJK0204DPA , RJK0206DPA , RJK0208DPA , RJK0210DPA .

History: KTD2005

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