RJJ0101DPD Datasheet and Replacement
Type Designator: RJJ0101DPD
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 235 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: MP3A
RJJ0101DPD substitution
RJJ0101DPD Datasheet (PDF)
rej03g1580 rjj0101dpdds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: HITK0202MP , HITK0203MP , HITK0204MP , HITK0302MP , HITK0303MP , HS54095 , HS54095TZ-E , HS56021 , 8N60 , RJJ0315DPA , RJJ0621DPP , RJJ1011DPD , RJK0202DSP , RJK0204DPA , RJK0206DPA , RJK0208DPA , RJK0210DPA .
History: KTD2005
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History: KTD2005



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