RJJ0315DPA Datasheet and Replacement
Type Designator: RJJ0315DPA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 930 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm
Package: WPAK
RJJ0315DPA substitution
RJJ0315DPA Datasheet (PDF)
r07ds0388ej rjj0315dpa.pdf

DatasheetRJJ0315DPA R07DS0388EJ0300(Previous: REJ03G1920-0200)Silicon P Channel Power MOS FET Rev.3.00High Speed Power Switching Apr 28, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.8 m typ. (at VGS = -10 V) Pb-free Halogen-free Outline RENESAS
Datasheet: HITK0203MP , HITK0204MP , HITK0302MP , HITK0303MP , HS54095 , HS54095TZ-E , HS56021 , RJJ0101DPD , EMB04N03H , RJJ0621DPP , RJJ1011DPD , RJK0202DSP , RJK0204DPA , RJK0206DPA , RJK0208DPA , RJK0210DPA , RJK0211DPA .
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