RJJ0315DPA Datasheet. Specs and Replacement

Type Designator: RJJ0315DPA

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 930 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm

Package: WPAK

RJJ0315DPA substitution

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RJJ0315DPA datasheet

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RJJ0315DPA

Datasheet RJJ0315DPA R07DS0388EJ0300 (Previous REJ03G1920-0200) Silicon P Channel Power MOS FET Rev.3.00 High Speed Power Switching Apr 28, 2011 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.8 m typ. (at VGS = -10 V) Pb-free Halogen-free Outline RENESAS... See More ⇒

Detailed specifications: HITK0203MP, HITK0204MP, HITK0302MP, HITK0303MP, HS54095, HS54095TZ-E, HS56021, RJJ0101DPD, AON7403, RJJ0621DPP, RJJ1011DPD, RJK0202DSP, RJK0204DPA, RJK0206DPA, RJK0208DPA, RJK0210DPA, RJK0211DPA

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs