RJJ0315DPA MOSFET. Datasheet pdf. Equivalent
Type Designator: RJJ0315DPA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 48 nC
trⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 930 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm
Package: WPAK
RJJ0315DPA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RJJ0315DPA Datasheet (PDF)
r07ds0388ej rjj0315dpa.pdf
DatasheetRJJ0315DPA R07DS0388EJ0300(Previous: REJ03G1920-0200)Silicon P Channel Power MOS FET Rev.3.00High Speed Power Switching Apr 28, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.8 m typ. (at VGS = -10 V) Pb-free Halogen-free Outline RENESAS
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: 2N80L-TM3-R
History: 2N80L-TM3-R
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918