All MOSFET. RJJ0315DPA Datasheet

 

RJJ0315DPA Datasheet and Replacement


   Type Designator: RJJ0315DPA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 930 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm
   Package: WPAK
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RJJ0315DPA Datasheet (PDF)

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RJJ0315DPA

DatasheetRJJ0315DPA R07DS0388EJ0300(Previous: REJ03G1920-0200)Silicon P Channel Power MOS FET Rev.3.00High Speed Power Switching Apr 28, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.8 m typ. (at VGS = -10 V) Pb-free Halogen-free Outline RENESAS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BUK78150-55A | HUF75545S3S | HUF75343S3S | SVG076R5NDTR | SVS65R240FJDD4 | AP9T15GJ-HF | TA75321

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