RJJ1011DPD PDF and Equivalents Search

 

RJJ1011DPD Specs and Replacement


   Type Designator: RJJ1011DPD
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Id| ⓘ - Maximum Drain Current: 6 A

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: MP3A
 

 RJJ1011DPD substitution

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RJJ1011DPD datasheet

 0.1. Size:119K  renesas
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RJJ1011DPD

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Detailed specifications: HITK0302MP , HITK0303MP , HS54095 , HS54095TZ-E , HS56021 , RJJ0101DPD , RJJ0315DPA , RJJ0621DPP , EMB04N03H , RJK0202DSP , RJK0204DPA , RJK0206DPA , RJK0208DPA , RJK0210DPA , RJK0211DPA , RJK0212DPA , RJK0213DPA .

Keywords - RJJ1011DPD MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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