BUZ60B PDF and Equivalents Search

 

BUZ60B Specs and Replacement

Type Designator: BUZ60B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO220M

BUZ60B substitution

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BUZ60B datasheet

 ..1. Size:276K  st
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BUZ60B

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 ..2. Size:229K  inchange semiconductor
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BUZ60B

isc N-Channel Mosfet Transistor BUZ60B FEATURES 4.5A, 400V SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters... See More ⇒

 9.1. Size:273K  st
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BUZ60B

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 9.2. Size:181K  siemens
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BUZ60B

BUZ 60 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 60 400 V 5.5 A 1 TO-220 AB C67078-S1312-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 36 C 5.5 Pulsed drain current IDpuls TC = 25 C 22 Avalanche current,limited by Tjmax IAR 5.... See More ⇒

Detailed specifications: BUZ50ASM , BUZ50A-TO220M , BUZ50B , BUZ50B-220M , BUZ50B-220SM , BUZ50BSM , BUZ50B-TO220M , BUZ60 , IRFP260 , BUZ63 , BUZ64 , BUZ71 , BUZ71A , BUZ71AFI , BUZ71FI , BUZ72A , BUZ74 .

Keywords - BUZ60B MOSFET specs

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