BUZ60B - описание и поиск аналогов

isc N-Channel Mosfet Transistor BUZ60B FEATURES 4.5A, 400V SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters

BUZ 60 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 60 400 V 5.5 A 1 TO-220 AB C67078-S1312-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 36 C 5.5 Pulsed drain current IDpuls TC = 25 C 22 Avalanche current,limited by Tjmax IAR 5.

isc N-Channel Mosfet Transistor BUZ60 FEATURES 5.5A, 400V SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters,