RJK5026DPP-M0
MOSFET. Datasheet pdf. Equivalent
Type Designator: RJK5026DPP-M0
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 28.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 19
nS
Cossⓘ -
Output Capacitance: 52
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.7
Ohm
Package:
TO220FL
RJK5026DPP-M0
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RJK5026DPP-M0
Datasheet (PDF)
4.1. Size:97K renesas
r07ds0422ej rjk5026dpp.pdf 
Preliminary Datasheet RJK5026DPP-M0 R07DS0422EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching May 26, 2011Features Low on-resistance RDS(on) = 1.35 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Source
5.1. Size:76K renesas
r07ds0494ej rjk5026dpe.pdf
Preliminary Datasheet RJK5026DPE R07DS0494EJ0200(Previous: REJ03G1852-0100)Silicon N Channel MOS FET Rev.2.00High Speed Power Switching Jul 21, 2011Features Low on-resistance RDS(on) = 1.35 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )D
8.1. Size:82K renesas
rej03g1263 rjk5020dpkds.pdf
Preliminary Datasheet RJK5020DPK REJ03G1263-0300Silicon N Channel MOS FET Rev.3.00High Speed Power Switching Jun 30, 2010Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P) D1. Gate2. Drain (Flange)G3. SourceS123Absolute Maximum Ratings (Ta = 25C) Item
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