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BUZ80 PDF Specs and Replacement


   Type Designator: BUZ80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   Cossⓘ - Output Capacitance: 850 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO220
 

 BUZ80 substitution

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BUZ80 PDF Specs

 ..1. Size:105K  st
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BUZ80

BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D BUZ80 800 V ... See More ⇒

 ..2. Size:180K  siemens
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BUZ80

BUZ 80 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 80 800 V 3.1 A 4 TO-220 AB C67078-S1309-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 28 C 3.1 Pulsed drain current IDpuls TC = 25 C 12.5 Avalanche current,limited by Tjmax IAR ... See More ⇒

 ..3. Size:229K  inchange semiconductor
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BUZ80

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 0.1. Size:196K  st
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BUZ80

BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D BUZ80 800 V ... See More ⇒

Detailed specifications: BUZ71A , BUZ71AFI , BUZ71FI , BUZ72A , BUZ74 , BUZ74A , BUZ76 , BUZ76A , IRF530 , BUZ80A , BUZ80AFI , BUZ80FI , BUZ90 , BUZ900 , BUZ900D , BUZ900DP , BUZ900P .

Keywords - BUZ80 MOSFET specs

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