All MOSFET. BUZ80 Datasheet

 

BUZ80 Datasheet and Replacement


   Type Designator: BUZ80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 42 nC
   Cossⓘ - Output Capacitance: 850 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO220
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BUZ80 Datasheet (PDF)

 ..1. Size:105K  st
 buz80.pdf pdf_icon

BUZ80

BUZ80BUZ80FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DBUZ80 800 V

 ..2. Size:180K  siemens
 buz80.pdf pdf_icon

BUZ80

BUZ 80SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 80 800 V 3.1 A 4 TO-220 AB C67078-S1309-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 3.1Pulsed drain current IDpulsTC = 25 C 12.5Avalanche current,limited by Tjmax IAR

 ..3. Size:229K  inchange semiconductor
 buz80.pdf pdf_icon

BUZ80

isc N-Channel Mosfet Transistor BUZ80FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective application100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSwitching mode power suppliesDC-DC & DC-AC converterABSOLUTE MAXIMUM RATINGS(T =25

 0.1. Size:196K  st
 buz80fi.pdf pdf_icon

BUZ80

BUZ80BUZ80FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DBUZ80 800 V

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Datasheet: BUZ71A , BUZ71AFI , BUZ71FI , BUZ72A , BUZ74 , BUZ74A , BUZ76 , BUZ76A , IRF530 , BUZ80A , BUZ80AFI , BUZ80FI , BUZ90 , BUZ900 , BUZ900D , BUZ900DP , BUZ900P .

Keywords - BUZ80 MOSFET datasheet

 BUZ80 cross reference
 BUZ80 equivalent finder
 BUZ80 lookup
 BUZ80 substitution
 BUZ80 replacement

 

 
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