All MOSFET. BUZ80A Datasheet

 

BUZ80A MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUZ80A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 55 nC
   Cossⓘ - Output Capacitance: 1100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO220

 BUZ80A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUZ80A Datasheet (PDF)

 ..1. Size:107K  st
 buz80a.pdf

BUZ80A BUZ80A

BUZ80ABUZ80AFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DBUZ80A 800 V

 ..2. Size:176K  siemens
 buz80a.pdf

BUZ80A BUZ80A

BUZ 80ASIPMOS Power Transistor N channel Enhancement modePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 80A 800 V 3 A 3 TO-220 AB C67078-A1309-A3Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS 800 VVDGRDrain-gate voltageRGS = 20 k 800Continuous drain current ID ATC = 50 C 3Pulsed drain current IDpulsTC =

 ..3. Size:229K  inchange semiconductor
 buz80a.pdf

BUZ80A BUZ80A

isc N-Channel Mosfet Transistor BUZ80AFEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc

 0.1. Size:197K  st
 buz80afi.pdf

BUZ80A BUZ80A

BUZ80ABUZ80AFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DBUZ80A 800 V

 9.1. Size:196K  st
 buz80fi.pdf

BUZ80A BUZ80A

BUZ80BUZ80FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DBUZ80 800 V

 9.2. Size:105K  st
 buz80.pdf

BUZ80A BUZ80A

BUZ80BUZ80FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DBUZ80 800 V

 9.3. Size:180K  siemens
 buz80.pdf

BUZ80A BUZ80A

BUZ 80SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 80 800 V 3.1 A 4 TO-220 AB C67078-S1309-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 3.1Pulsed drain current IDpulsTC = 25 C 12.5Avalanche current,limited by Tjmax IAR

 9.4. Size:226K  inchange semiconductor
 buz80fi.pdf

BUZ80A BUZ80A

isc N-Channel Mosfet Transistor BUZ80FIFEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective application100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSwitching mode power suppliesDC-DC & DC-AC converterABSOLUTE MAXIMUM RATINGS(T =25

 9.5. Size:229K  inchange semiconductor
 buz80.pdf

BUZ80A BUZ80A

isc N-Channel Mosfet Transistor BUZ80FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective application100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSwitching mode power suppliesDC-DC & DC-AC converterABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: BUZ71AFI , BUZ71FI , BUZ72A , BUZ74 , BUZ74A , BUZ76 , BUZ76A , BUZ80 , 2N7000 , BUZ80AFI , BUZ80FI , BUZ90 , BUZ900 , BUZ900D , BUZ900DP , BUZ900P , BUZ900X4S .

History: NDD03N60Z | NDF06N62Z

 

 
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