RJM0306JSP MOSFET. Datasheet pdf. Equivalent
Type Designator: RJM0306JSP
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 3.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: SOP8
RJM0306JSP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RJM0306JSP Datasheet (PDF)
rej03g1571 rjm0306jspds.pdf
Preliminary Datasheet RJM0306JSP REJ03G1571-0101Silicon N / P Channel Power MOS FET Rev.1.01High Speed Power Switching May 28, 2010Features Two elements each of N and P channels are incorporated (suitable for H-bridge circuit) High density mounting Low on-resistance Capable of 4 V gate drive High temperature D-S leakage guarantee Avalanche rating
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: AFP8206 | WMK80R1K0S
History: AFP8206 | WMK80R1K0S
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918