All MOSFET. RJM0306JSP Datasheet

 

RJM0306JSP Datasheet and Replacement


   Type Designator: RJM0306JSP
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOP8
 

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RJM0306JSP Datasheet (PDF)

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RJM0306JSP

Preliminary Datasheet RJM0306JSP REJ03G1571-0101Silicon N / P Channel Power MOS FET Rev.1.01High Speed Power Switching May 28, 2010Features Two elements each of N and P channels are incorporated (suitable for H-bridge circuit) High density mounting Low on-resistance Capable of 4 V gate drive High temperature D-S leakage guarantee Avalanche rating

Datasheet: RJL5020DPK , RJL5032DPP-M0 , RJL6012DPE , RJL6013DPE , RJL6015DPK , RJL6018DPK , RJL6020DPK , RJL6032DPP-M0 , IRFB4110 , RQJ0201UGDQA , RQJ0202VGDQA , RQJ0203WGDQA , RQJ0204XGDQA , RQJ0301HGDQS , RQJ0302NGDQA , RQJ0303PGDQA , RQJ0304DQDQA .

History: IRFS832 | HGS480N15M | OSG60R200JSZF | IRFH5303PBF | IXTA460P2 | KP775A | AP2305CGN-HF

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