RJM0306JSP Datasheet. Specs and Replacement

Type Designator: RJM0306JSP

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: SOP8

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RJM0306JSP datasheet

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RJM0306JSP

Preliminary Datasheet RJM0306JSP REJ03G1571-0101 Silicon N / P Channel Power MOS FET Rev.1.01 High Speed Power Switching May 28, 2010 Features Two elements each of N and P channels are incorporated (suitable for H-bridge circuit) High density mounting Low on-resistance Capable of 4 V gate drive High temperature D-S leakage guarantee Avalanche rating ... See More ⇒

Detailed specifications: RJL5020DPK, RJL5032DPP-M0, RJL6012DPE, RJL6013DPE, RJL6015DPK, RJL6018DPK, RJL6020DPK, RJL6032DPP-M0, AON6414A, RQJ0201UGDQA, RQJ0202VGDQA, RQJ0203WGDQA, RQJ0204XGDQA, RQJ0301HGDQS, RQJ0302NGDQA, RQJ0303PGDQA, RQJ0304DQDQA

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