All MOSFET. RJM0306JSP Datasheet

 

RJM0306JSP Datasheet and Replacement


   Type Designator: RJM0306JSP
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOP8
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RJM0306JSP Datasheet (PDF)

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RJM0306JSP

Preliminary Datasheet RJM0306JSP REJ03G1571-0101Silicon N / P Channel Power MOS FET Rev.1.01High Speed Power Switching May 28, 2010Features Two elements each of N and P channels are incorporated (suitable for H-bridge circuit) High density mounting Low on-resistance Capable of 4 V gate drive High temperature D-S leakage guarantee Avalanche rating

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History: VBNC1303 | IRFS4010PBF

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