RQK2501YGDQA PDF and Equivalents Search

 

RQK2501YGDQA Specs and Replacement

Type Designator: RQK2501YGDQA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.4 Ohm

Package: SC59A MPAK

RQK2501YGDQA substitution

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RQK2501YGDQA datasheet

 4.1. Size:109K  renesas
 r07ds0312ej rqk2501ygd.pdf pdf_icon

RQK2501YGDQA

Preliminary Datasheet RQK2501YGDQA R07DS0312EJ0300 (Previous REJ03G1521-0200) Silicon N Channel MOS FET Rev.3.00 Power Switching Mar 28, 2011 Features High drain to source voltage and Low gate drive VDSS 250 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code PLSP0003ZB-A (Pac... See More ⇒

Detailed specifications: RQK0603CGDQS, RQK0604IGDQA, RQK0605JGDQA, RQK0606KGDQA, RQK0607AQDQS, RQK0608BQDQS, RQK0609CQDQS, RQK2001HQDQA, TK10A60D, RQM2201DNS, RJK0362DSP, RJK0358DSP, HAT1132R, HAT1131R, HAT1130R, HAT1129R, HAT1128R

Keywords - RQK2501YGDQA MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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