All MOSFET. RQK2501YGDQA Datasheet

 

RQK2501YGDQA Datasheet and Replacement


   Type Designator: RQK2501YGDQA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 0.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.4 Ohm
   Package: SC59A MPAK
 

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RQK2501YGDQA Datasheet (PDF)

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RQK2501YGDQA

Preliminary Datasheet RQK2501YGDQA R07DS0312EJ0300(Previous: REJ03G1521-0200)Silicon N Channel MOS FET Rev.3.00Power Switching Mar 28, 2011Features High drain to source voltage and Low gate drive VDSS : 250 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A(Pac

Datasheet: RQK0603CGDQS , RQK0604IGDQA , RQK0605JGDQA , RQK0606KGDQA , RQK0607AQDQS , RQK0608BQDQS , RQK0609CQDQS , RQK2001HQDQA , IRFZ24N , RQM2201DNS , RJK0362DSP , RJK0358DSP , HAT1132R , HAT1131R , HAT1130R , HAT1129R , HAT1128R .

History: MMP2301 | R6004ENX | HCP90R300 | 2N65L-TMA-T | SM6F24NSU | SVF12N60STR | NTMFS5C450NL

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