All MOSFET. RQA0009SXAQS Datasheet

 

RQA0009SXAQS Datasheet and Replacement


   Type Designator: RQA0009SXAQS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 16 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 3.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: UPAK SC62
 

 RQA0009SXAQS substitution

   - MOSFET ⓘ Cross-Reference Search

 

RQA0009SXAQS Datasheet (PDF)

 4.1. Size:217K  renesas
r07ds0493ej rqa0009sxa.pdf pdf_icon

RQA0009SXAQS

Preliminary Datasheet R07DS0493EJ0200RQA0009SXAQS (Previous: REJ03G1566-0100)Rev.2.00Silicon N-Channel MOS FET Jun 28, 2011Features High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) Compact package capable of surface mounting Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2

 7.1. Size:217K  renesas
r07ds0492ej rqa0009txd.pdf pdf_icon

RQA0009SXAQS

Preliminary Datasheet R07DS0492EJ0200RQA0009TXDQS (Previous: REJ03G1520-0100)Rev.2.00Silicon N-Channel MOS FET Jun 28, 2011Features High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) Compact package capable of surface mounting Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2

 8.1. Size:151K  1
rqa0008nxaqs.pdf pdf_icon

RQA0009SXAQS

RQA0008NXAQS Silicon N-Channel MOS FET REJ03G1569-0100 Rev.1.00 Jul 04, 2007 Features High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-AR(Package Name : UPAK )3121. Gate32. Source13. Drain4. Source42,

 8.2. Size:75K  1
rqa0005aqs.pdf pdf_icon

RQA0009SXAQS

RQA0005AQS Silicon N-Channel MOS FET Preliminary Rev.1.0 Aug.10,2005 Features High Output Power, High Gain, High Efficiency Po = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A(Package Name: UPAK)3121. Gate31 2. Source3. Drain4. Source42Note: Marking is

Datasheet: RQA0004PXDQS , RQA0005QXDQS , RQA0010VXDQS , RQA0008RXDQS , RQA0009TXDQS , RQA0004LXAQS , RQA0005AQS , RQA0008NXAQS , AO4468 , RQA0010UXAQS , 2SJ661 , 2SJ665 , 2SK3707 , 2SK3821 , 2SK3823 , 2SK3824 , 2SK3826 .

History: TSM3457CX6 | IXFT80N10 | SSM6L14FE | GP2M002A060XG | DAMH300N150 | FQD6N25TM | IXTH3N120

Keywords - RQA0009SXAQS MOSFET datasheet

 RQA0009SXAQS cross reference
 RQA0009SXAQS equivalent finder
 RQA0009SXAQS lookup
 RQA0009SXAQS substitution
 RQA0009SXAQS replacement

 

 
Back to Top

 


 
.