All MOSFET. VEC2415 Datasheet

 

VEC2415 Datasheet and Replacement


   Type Designator: VEC2415
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: VEC8
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VEC2415 Datasheet (PDF)

 ..1. Size:276K  sanyo
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VEC2415

VEC2415Ordering number : ENA1713SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceVEC2415ApplicationsFeatures Low ON-resistance. Composite type facilitating high-density mounting. 4V drive. Mounting high 0.75mm.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Sourc

 ..2. Size:635K  onsemi
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VEC2415

VEC2415 Power MOSFET 60V, 80m, 3A, Dual N-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features VDSS RDS(on) Max ID Max Low On-Resist

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SFG15R25GF | MC08N005C | IRLR024 | CED05N8 | IRFR15N20DPBF | AON6794 | BL10N70-A

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