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VEC2415 Specs and Replacement

Type Designator: VEC2415

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 57 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: VEC8

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VEC2415 datasheet

 ..1. Size:276K  sanyo
vec2415.pdf pdf_icon

VEC2415

VEC2415 Ordering number ENA1713 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device VEC2415 Applications Features Low ON-resistance. Composite type facilitating high-density mounting. 4V drive. Mounting high 0.75mm. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Sourc... See More ⇒

 ..2. Size:635K  onsemi
vec2415.pdf pdf_icon

VEC2415

VEC2415 Power MOSFET 60V, 80m , 3A, Dual N-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features VDSS RDS(on) Max ID Max Low On-Resist... See More ⇒

Detailed specifications: MCH3476, MCH3478, MCH3479, MCH6448, MCH6603, SCH1333, SCH1343, SFT1345, SI2302, 2SK715, CPH3910, CPH6904, MCH3914, MCH5908, TF408, TF410, 2SK2701A

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