All MOSFET. EKV550 Datasheet

 

EKV550 Datasheet and Replacement


   Type Designator: EKV550
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 360 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO220
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EKV550 Datasheet (PDF)

 ..1. Size:316K  sanken-ele
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EKV550

50V N-ch MOSFET EKV550 January. 2006Features PackageTO-220 Low on-resistance Avalanche energy capability guaranteed Built-in Gate protection diode against electrostatic discharge (ESD) Applications DC-DC Converters High speed switching Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (Ta=25C Parameter Symbol

 ..2. Size:250K  inchange semiconductor
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EKV550

isc N-Channel MOSFET Transistor EKV550FEATURESDrain Current I =50A@ T =25D CDrain Source Voltage-: V =50V(Min)DSSStatic Drain-Source On-Resistance: R = 15m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose ap

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXFC80N10 | AS2341 | DE275X2-501N16A | LSB55R066GT | NCEP6012AS | 1N65L-AA3-R | 2SK162

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