All MOSFET. FKV575 Datasheet

 

FKV575 Datasheet and Replacement


   Type Designator: FKV575
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 280 nS
   Cossⓘ - Output Capacitance: 1800 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO220F
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FKV575 Datasheet (PDF)

 ..1. Size:329K  sanken-ele
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FKV575

MOS FET FKV575 November, 2008 Features Package----FM20(TO220 Full Mold) High Current Capability (ID:75A (DC)) Low on-resistance (RDS(on):7m typ) Avalanche energy guarantee Applications DC-DC Converters High speed switching Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (Ta=25C Characteristic Symbol Rating Unit

 ..2. Size:200K  inchange semiconductor
 fkv575.pdf pdf_icon

FKV575

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FKV575FEATURESWith TO-220F packagingLow on-resistanceLow drive currentEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsDC-DC convertersUninterruptible power supplyABSOLUTE MAXIMUM RATINGS(T =2

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