All MOSFET. FKV660S Datasheet

 

FKV660S MOSFET. Datasheet pdf. Equivalent

Type Designator: FKV660S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 60 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 400 nS

Drain-Source Capacitance (Cd): 900 pF

Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm

Package: TO220S

FKV660S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FKV660S Datasheet (PDF)

1.1. fkv660s.pdf Size:22K _sanken-ele

FKV660S

MOS FET FKV660S Absolute Maximum Ratings(Ta=25?C) Electrical Characteristics External Dimensions TO220S (Ta=25?C) Symbol Ratings Unit Ratings Symbol Test Conditions Unit min typ max V 60 V DSS V +20, 10 V V I =100A, V =0V 4.440.2 GSS (BR)DSS D GS 60 V 10.20.3 I 60 A V =+20V +10 D GS 1.30.2 I A GSS V =10V I 180 A GS 5 D(pulse) A P V =60V, V =0V 100 D 60(Tc=25?C) W I D

Datasheet: FKP253 , FKP280A , FKP300A , FKP330C , FKV460S , FKV550N , FKV550T , FKV575 , IRFP4229 , FLD470 , MLD685D , SKP202 , SKP253 , 2SK3018 , 2SK3018UB , 2SK3019 , 2SK3019EB .

 


FKV660S
  FKV660S
  FKV660S
 

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