FKV660S Specs and Replacement
Type Designator: FKV660S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 400 nS
Cossⓘ - Output Capacitance: 900 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO220S
FKV660S substitution
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FKV660S datasheet
fkv660s.pdf
MOS FET FKV660S Absolute Maximum Ratings(Ta=25 C) Electrical Characteristics External Dimensions TO220S (Ta=25 C) Symbol Ratings Unit Ratings Symbol Test Conditions Unit min typ max V 60 V DSS V +20, 10 V V I =100 A, V =0V 4.44 0.2 GSS (BR)DSS D GS 60 V 10.2 0.3 I 60 A V =+20V +10 D GS 1.3 0.2 I A GSS V = 10V I 180 A GS 5 D(pulse) A P V =60V, V =0V 100 ... See More ⇒
fkv660s.pdf
isc N-Channel MOSFET Transistor FKV660S FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 14m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒
Detailed specifications: FKP253, FKP280A, FKP300A, FKP330C, FKV460S, FKV550N, FKV550T, FKV575, 60N06, FLD470, MLD685D, SKP202, SKP253, 2SK3018, 2SK3018UB, 2SK3019, 2SK3019EB
Keywords - FKV660S MOSFET specs
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