All MOSFET. FKV660S Datasheet

 

FKV660S Datasheet and Replacement


   Type Designator: FKV660S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 400 nS
   Cossⓘ - Output Capacitance: 900 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO220S
 

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FKV660S Datasheet (PDF)

 ..1. Size:22K  sanken-ele
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FKV660S

MOS FET FKV660SAbsolute Maximum Ratings(Ta=25C) Electrical Characteristics External Dimensions TO220S(Ta=25C)Symbol Ratings Unit RatingsSymbol Test Conditions Unitmin typ maxV 60 VDSSV +20, 10 V V I =100A, V =0V 4.440.2GSS (BR)DSS D GS 60 V 10.20.3I 60 A V =+20V +10D GS1.30.2I AGSSV =10VI 180 A GS 5D(pulse)AP V =60V, V =0V 100

 ..2. Size:254K  inchange semiconductor
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FKV660S

isc N-Channel MOSFET Transistor FKV660SFEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 14m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Datasheet: FKP253 , FKP280A , FKP300A , FKP330C , FKV460S , FKV550N , FKV550T , FKV575 , AO4468 , FLD470 , MLD685D , SKP202 , SKP253 , 2SK3018 , 2SK3018UB , 2SK3019 , 2SK3019EB .

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