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MLD685D Specs and Replacement

Type Designator: MLD685D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 1500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm

Package: TO3P

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MLD685D datasheet

 ..1. Size:351K  sanken-ele
 mld685d.pdf pdf_icon

MLD685D

http //www.sanken-ele.co.jp SANKEN ELECTRIC Feb. 2011 Features Package MT100 (TO3P) Low on-state resistance Built-in gate protection diode Applications Electric power steering High current switching Key Specifications V(BR)DSS=60V (ID=100 A) RDS(ON)=4.7m Max. (VGS=10V,ID=42A) Internal Equivalent Circuit (2) (1) (3) ... See More ⇒

 ..2. Size:258K  inchange semiconductor
 mld685d.pdf pdf_icon

MLD685D

isc N-Channel MOSFET Transistor MLD685D FEATURES Drain Current I = 85A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 4.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒

Detailed specifications: FKP300A, FKP330C, FKV460S, FKV550N, FKV550T, FKV575, FKV660S, FLD470, AO4468, SKP202, SKP253, 2SK3018, 2SK3018UB, 2SK3019, 2SK3019EB, 2SK3541, R4008AND

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