R5005CNJ Specs and Replacement

Type Designator: R5005CNJ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: LPTS

R5005CNJ substitution

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R5005CNJ datasheet

 ..1. Size:1198K  rohm
 r5005cnj.pdf pdf_icon

R5005CNJ

Data Sheet 10V Drive Nch MOSFET R5005CNJ Structure Dimensions (Unit mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1.24 1) Low on-resistance. 2) High-speed switching. 2.54 0.4 0.78 2.7 3) Wide range of SOA. 5.08 (1) Gate (1) (2) (3) (2) Drain 4) Drive circuits can be simple. (3) Source 5) Parallel use is easy. Application Switching Packagin... See More ⇒

 7.1. Size:1623K  rohm
 r5005cnx.pdf pdf_icon

R5005CNJ

R5005CNX Datasheet Nch 500V 5A Power MOSFET lOutline l TO-220FM VDSS 500V RDS(on)(Max.) 1.6 ID 5A PD 40W lInner circuit l lFeatures l 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits ... See More ⇒

Detailed specifications: SKP202, SKP253, 2SK3018, 2SK3018UB, 2SK3019, 2SK3019EB, 2SK3541, R4008AND, 50N06, R5007ANJ, R5007ANX, R5009ANJ, R5009ANX, R5009FNX, R5011ANJ, R5011ANX, R5011FNX

Keywords - R5005CNJ MOSFET specs

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