R5007ANJ Datasheet and Replacement
Type Designator: R5007ANJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: LPTS
R5007ANJ substitution
R5007ANJ Datasheet (PDF)
r5007anj.pdf

10V Drive Nch MOSFET R5007ANJ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS10.1 4.51.3 Features 1) Low on-resistance. 1.242) Fast switching speed. 3) Wide SOA (safe operating area). 2.54 0.40.784) Gate-source voltage (VGSS) guaranteed to be 30V. 2.75.08(1) Base (Gate) (1) (2) (3)5) Drive circuits can be simple. (2) Collector (Drain)6)
r5007anx.pdf

10V Drive Nch MOSFET R5007ANX Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TO-220FM10.0 3.2 4.52.8Features 1) Low on-resistance. 2) Fast switching speed. 1.23) Wide SOA (safe operating area). 1.34) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuits can be simple. 0.86) Parallel use is easy. (1)Base2.54 2.54 0.75 2.6
r5007fnx.pdf

R5007FNXDatasheetNch 500V 7A Power MOSFETlOutlinel TO-220FMVDSS500VRDS(on)(Max.)1.3 ID7A PD40W lInner circuitllFeaturesl1) Fast reverse recovery time (trr).2) Low on-resistance.3) Fast switching speed.4) Gate-source voltage (VGSS) guaranteed t
Datasheet: SKP253 , 2SK3018 , 2SK3018UB , 2SK3019 , 2SK3019EB , 2SK3541 , R4008AND , R5005CNJ , IRF640 , R5007ANX , R5009ANJ , R5009ANX , R5009FNX , R5011ANJ , R5011ANX , R5011FNX , R5013ANJ .
History: WMM36N65C4 | PA910BM | BRCS30N02DP | AFN1304 | DCCF016M120G3 | BSL302SN | AFN3606S
Keywords - R5007ANJ MOSFET datasheet
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History: WMM36N65C4 | PA910BM | BRCS30N02DP | AFN1304 | DCCF016M120G3 | BSL302SN | AFN3606S



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