All MOSFET. R5013ANX Datasheet

 

 

R5013ANX Datasheet and Replacement


   Type Designator: R5013ANX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: TO220FM
 

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R5013ANX Datasheet (PDF)

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R5013ANX

R5013ANX Transistors 10V Drive Nch MOSFET R5013ANX Dimensions (Unit : mm) Structure Silicon N-channel MOSFET TO-220FM10.0 3.2 4.52.8 Features 1) Low on-resistance. 1.21.32) Fast switching speed. 3) Wide SOA (safe operating area). 0.8(1)Base4) Gate-source voltage (VGSS) 2.54 2.54 0.75 2.6(2)Collector (1) (2) (3)guaranteed to be 30V. (3)Emitter5) Drive

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R5013ANX

10V Drive Nch MOSFET R5013ANJ Structure Dimensions (Unit : mm) LPTSSilicon N-channel MOSFET 10.14.51.3 Features 1.241) Low on-resistance. 2) Fast switching speed. 2.54 0.40.785.08 2.73) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (1) (2) (3)(2) Drain4) Drive circuits can be simple. (3) SourceEach lead has same dimensions5) Parallel use i

Datasheet: R5007ANX , R5009ANJ , R5009ANX , R5009FNX , R5011ANJ , R5011ANX , R5011FNX , R5013ANJ , IRFB4227 , R5016ANJ , R5016ANX , R5016FNX , R5019ANJ , R5019ANX , R5021ANX , R5205CND , R5207AND .

History: SIHG30N60E

Keywords - R5013ANX MOSFET datasheet

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