R5013ANX Specs and Replacement

Type Designator: R5013ANX

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: TO220FM

R5013ANX substitution

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R5013ANX datasheet

 ..1. Size:237K  rohm
 r5013anx.pdf pdf_icon

R5013ANX

R5013ANX Transistors 10V Drive Nch MOSFET R5013ANX Dimensions (Unit mm) Structure Silicon N-channel MOSFET TO-220FM 10.0 3.2 4.5 2.8 Features 1) Low on-resistance. 1.2 1.3 2) Fast switching speed. 3) Wide SOA (safe operating area). 0.8 (1)Base 4) Gate-source voltage (VGSS) 2.54 2.54 0.75 2.6 (2)Collector (1) (2) (3) guaranteed to be 30V. (3)Emitter 5) Drive ... See More ⇒

 7.1. Size:262K  rohm
 r5013anj.pdf pdf_icon

R5013ANX

10V Drive Nch MOSFET R5013ANJ Structure Dimensions (Unit mm) LPTS Silicon N-channel MOSFET 10.1 4.5 1.3 Features 1.24 1) Low on-resistance. 2) Fast switching speed. 2.54 0.4 0.78 5.08 2.7 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (1) (2) (3) (2) Drain 4) Drive circuits can be simple. (3) Source Each lead has same dimensions 5) Parallel use i... See More ⇒

Detailed specifications: R5007ANX, R5009ANJ, R5009ANX, R5009FNX, R5011ANJ, R5011ANX, R5011FNX, R5013ANJ, IRFB4227, R5016ANJ, R5016ANX, R5016FNX, R5019ANJ, R5019ANX, R5021ANX, R5205CND, R5207AND

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