R5016FNX Specs and Replacement

Type Designator: R5016FNX

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 1000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: TO220FM

R5016FNX substitution

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R5016FNX datasheet

 ..1. Size:1194K  rohm
 r5016fnx.pdf pdf_icon

R5016FNX

Data Sheet 10V Drive Nch MOSFET R5016FNX Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1.2 1) Low on-resistance. 1.3 2) Low input capacitance. 0.8 3) High ESD. (1) Gate 2.54 2.54 0.75 2.6 (2) Drain (1) (2) (3) (3) Source Application Switching Packaging specifications Inner circuit Package Bulk Type ... See More ⇒

 7.1. Size:3327K  rohm
 r5016fnj.pdf pdf_icon

R5016FNX

R5016FNJ Datasheet Nch 500V 16A Power MOSFET lOutline l LPT(S) VDSS 500V RDS(on)(Max.) 0.325 ID 16A PD 50W lInner circuit l lFeatures l 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to ... See More ⇒

 9.1. Size:279K  rohm
 r5016anj.pdf pdf_icon

R5016FNX

10V Drive Nch MOSFET R5016ANJ Structure Dimensions (Unit mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1) Low on-resistance. 1.24 2) Fast switching speed. 3) Wide SOA (safe operating area). 2.54 0.4 0.78 4) Gate-source voltage (VGSS) guaranteed to be 30V. 2.7 5.08 (1) Base (Gate) (1) (2) (3) 5) Drive circuits can be simple. (2) Collector (Drain) 6) P... See More ⇒

 9.2. Size:238K  rohm
 r5016anx.pdf pdf_icon

R5016FNX

R5016ANX Transistors 10V Drive Nch MOSFET R5016ANX Dimensions (Unit mm) Structure Silicon N-channel MOSFET TO-220FM 10.0 3.2 4.5 2.8 Features 1) Low on-resistance. 1.2 2) Fast switching speed. 1.3 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) 0.8 (1)Base guaranteed to be 30V. 2.54 2.54 0.75 2.6 (2)Collector (1) (2) (3) 5) Drive circuit... See More ⇒

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Detailed specifications: R5009FNX, R5011ANJ, R5011ANX, R5011FNX, R5013ANJ, R5013ANX, R5016ANJ, R5016ANX, AON6414A, R5019ANJ, R5019ANX, R5021ANX, R5205CND, R5207AND, R6004CND, R6006AND, R6006ANX

Keywords - R5016FNX MOSFET specs

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