All MOSFET. R5019ANJ Datasheet

 

R5019ANJ Datasheet and Replacement


   Type Designator: R5019ANJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: LPTS
 

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R5019ANJ Datasheet (PDF)

 ..1. Size:1186K  rohm
 r5019anj.pdf pdf_icon

R5019ANJ

Data Sheet10V Drive Nch MOSFET R5019ANJ Structure Dimensions (Unit : mm)Silicon N-channel MOSFETLPTS10.1 4.51.3Features1.241) Low on-resistance.2) High-speed switching.2.54 0.40.783) Wide SOA.2.75.08(1) Gate(1) (2) (3)(2) Drain4) Drive circuits can be simple.(3) Source5) Parallel use is easy. ApplicationSwitching Packaging specif

 7.1. Size:1187K  rohm
 r5019anx.pdf pdf_icon

R5019ANJ

Data Sheet10V Drive Nch MOSFET R5019ANX Structure Dimensions (Unit : mm)TO-220FMSilicon N-channel MOSFET10.0 3.2 4.52.8Features1.21) Low on-resistance.1.32) Low input capacitance.0.83) High ESD.(1) Gate(2) Drain2.54 2.54 0.75 2.6(1) (2) (3) (3) Source ApplicationSwitching Packaging specifications Inner circuitPackage BulkType

Datasheet: R5011ANJ , R5011ANX , R5011FNX , R5013ANJ , R5013ANX , R5016ANJ , R5016ANX , R5016FNX , IRFP250N , R5019ANX , R5021ANX , R5205CND , R5207AND , R6004CND , R6006AND , R6006ANX , R6008ANX .

History: IPD800N06NG

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