R5021ANX Specs and Replacement

Type Designator: R5021ANX

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 1000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: TO220FM

R5021ANX substitution

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R5021ANX datasheet

 ..1. Size:231K  rohm
 r5021anx.pdf pdf_icon

R5021ANX

R5021ANX Transistors 10V Drive Nch MOSFET R5021ANX Dimensions (Unit mm) Structure Silicon N-channel MOSFET TO-220FM 10.0 3.2 4.5 2.8 Features 1) Low on-resistance. 1.2 2) Fast switching speed. 1.3 3) Gate-source voltage (VGSS) guaranteed to be 30V. 0.8 (1)Base 4) Drive circuits can be simple. 2.54 2.54 0.75 2.6 (2)Collector (1) (2) (3) 5) Parallel use is... See More ⇒

 7.1. Size:805K  rohm
 r5021anj.pdf pdf_icon

R5021ANX

R5021ANJ Nch 500V 21A Power MOSFET Datasheet lOutline VDSS (2) 500V LPTS (SC-83) RDS(on) (Max.) 0.22W ID 21A (1) PD 100W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free... See More ⇒

Detailed specifications: R5011FNX, R5013ANJ, R5013ANX, R5016ANJ, R5016ANX, R5016FNX, R5019ANJ, R5019ANX, P55NF06, R5205CND, R5207AND, R6004CND, R6006AND, R6006ANX, R6008ANX, R6008FNJ, R6008FNX

Keywords - R5021ANX MOSFET specs

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