All MOSFET. R5021ANX Datasheet

 

R5021ANX Datasheet and Replacement


   Type Designator: R5021ANX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 64 nC
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 1000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO220FM
 

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R5021ANX Datasheet (PDF)

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R5021ANX

R5021ANX Transistors 10V Drive Nch MOSFET R5021ANX Dimensions (Unit : mm) Structure Silicon N-channel MOSFETTO-220FM10.0 3.2 4.52.8 Features 1) Low on-resistance. 1.22) Fast switching speed. 1.33) Gate-source voltage (VGSS) guaranteed to be 30V. 0.8(1)Base4) Drive circuits can be simple. 2.54 2.54 0.75 2.6(2)Collector (1) (2) (3)5) Parallel use is

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R5021ANX

R5021ANJ Nch 500V 21A Power MOSFET DatasheetlOutlineVDSS (2) 500V LPTS(SC-83)RDS(on) (Max.)0.22WID21A(1) PD100W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple.*1 Body Diode 5) Parallel use is easy.6) Pb-free

Datasheet: R5011FNX , R5013ANJ , R5013ANX , R5016ANJ , R5016ANX , R5016FNX , R5019ANJ , R5019ANX , IRFB4115 , R5205CND , R5207AND , R6004CND , R6006AND , R6006ANX , R6008ANX , R6008FNJ , R6008FNX .

History: 2P985B-2 | NVBLS001N06C

Keywords - R5021ANX MOSFET datasheet

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