All MOSFET. R5021ANX Datasheet

 

R5021ANX MOSFET. Datasheet pdf. Equivalent


   Type Designator: R5021ANX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 21 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 64 nC
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 1000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO220FM

 R5021ANX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

R5021ANX Datasheet (PDF)

 ..1. Size:231K  rohm
r5021anx.pdf

R5021ANX R5021ANX

R5021ANX Transistors 10V Drive Nch MOSFET R5021ANX Dimensions (Unit : mm) Structure Silicon N-channel MOSFETTO-220FM10.0 3.2 4.52.8 Features 1) Low on-resistance. 1.22) Fast switching speed. 1.33) Gate-source voltage (VGSS) guaranteed to be 30V. 0.8(1)Base4) Drive circuits can be simple. 2.54 2.54 0.75 2.6(2)Collector (1) (2) (3)5) Parallel use is

 7.1. Size:805K  rohm
r5021anj.pdf

R5021ANX R5021ANX

R5021ANJ Nch 500V 21A Power MOSFET DatasheetlOutlineVDSS (2) 500V LPTS(SC-83)RDS(on) (Max.)0.22WID21A(1) PD100W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple.*1 Body Diode 5) Parallel use is easy.6) Pb-free

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STP110N8F7 | HUF76139P3

 

 
Back to Top